澳大利亚西澳大学招聘纳米技术博士后

Job Title:     MBE-growth, Optimisation and Characterisation for Novel HgCdTe-based InfraRed Nanotechnologies
Job Number:     4009592
Date Posted:     07/12/2011
Application Deadline:     8/26/2011

Job Description
Location: The University of Western Australia, Perth, Western Australia

Position Reference Number: SSF1

Post-doctoral fellow position in a multi-disciplinary laboratory focused on the development of nanostructured infrared technology based on HgCdTe semiconductor alloys, nanostructures and superlattices. It will require a great deal of effort in the area of molecular-beam epitaxial growth of HgCdTe-based nanostructures, as well as the development of fabrication methods, and design of nanostructures. It is anticipated that the primary outcome of this research work will be the realisation of high performance infrared detectors and emitters with performance levels that are superior to those presently achievable.
This position will require significant efforts in the experimental determination of physical and structural parameters, and correlation with growth conditions, in order to discover optimal parameters that will allow growth of complex nanostructures as well as the demonstration of novel nanostructures. However, HgCdTe-based epitaxial layers and nanostructures are not sufficiently robust to allow the use of conventional sample preparation methods. To circumvent this challenging problem, the SSF is expected to develop cryogenic sample preparation methods and techniques that minimise damage to the samples to be studied and will need to rely on cryogenic stages in instruments such TEM, SEM, AFM, nano-SIMS and IMS 1280 ion probe, to study defects, interfaces, impurity incorporation, etc.

The work in this area will be carried out in collaboration with the following external institutions:
• UNM (USA) –InAs/GaSb-based type-II strained superlattices, sensors and nanophotonics (primarily through MBE expertise)
• Fraunhofer Institut (Germany) –MBE-grown HgCdTe and InAs/GaSb superlattices
• SITP (China) –MBE-grown HgCdTe nano-structured materials

Selection Criteria

Essential:
1. PhD in semiconductor physics, electronic engineering or equivalent
2. Candidate must meet the requirement of the SSF, as defined by the Australian Research Council (less than 3 years from PhD)
3. Experience in MBE growth technology
4. Excellent “hands-on” experimental skills on MBE systems
5. Sound knowledge of in-situ characterisation/monitoring methods and
equipment (RHEED, Ellipsometry, Flux control, temperature control)
6. Experience with semiconductor characterisation using X-ray diffraction,
SEM, TEM, AFM, SIMS.
7. Strong publication record
8. Good English communication skills

Desirable:
1. Knowledge of MBE HgCdTe growth

3 years appointment.
Salary: LVLA 8 A$74,713

The applications shall be written in English and include five following items:

1. A cover letter including position's Reference Number, residential status and short description of specific qualifications for the position
2. Statement addressing all selection criteria (in order as shown above)
3. Copies of education certificates
4. Curriculum Vitae
5. Name and contact details of two referees


Please Note ! Only complete applications will be considered.

Application deadline 26 August 2011
Contact:     Sabine Betts
School of Electrical, Electronic and Computer Engineering
The University of Western Australia
35 Stirling Highway
Crawley, Western Australia 6009
Australia
Phone: +61 8 6488 3801
Fax: +61 8 6488 1095
Email: sabine.bettsuwa.edu.au
Employer's Web Site:     Visit employer's website

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